UF830-E Datasheet, PDF (3/8 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF830-E
 INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
L_D
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
L_S
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
Power MOSFET
MIN TYP MAX UNIT
3.5
nH
4.5
nH
7.5
nH
 SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
V_SD
T_J=25°C,I_SD=4.5A, V_GS=0V(Note 1)
Continuous Source to Drain Current
Pulse Source to Drain Current
I_SD
I_SDM
Note 2
Reverse Recovery Time
t_rr
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs
Reverse Recovery Charge
Q_RR
T_J=25°C, I_SD=4.5A, dI/dt=100A/μs
Notes : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
180
0.96
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX UNIT
1.6 V
5.5 A
18 A
760 ns
4.3 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-993.B