2SD1060_08 Datasheet, PDF (5/5 Pages) Unisonic Technologies – NPN PLANAR SILICON TRANSISTOR

2SD1060
NPN SILICON TRANSISTOR
„ TYPICAL CHARACTERISTICS(Cont.)

2
10
I_CP
7
I_C
5
3
2
ASO
100ms
1.0
7
5
3
2 _{(Single pulse with}
0.1 ^{regard to 1 ~ 100ms)}
5 7_1.0 2 3 5 7 ₁₀ 2 3 5 7 ₁₀₀
Collector-to-Emitter Voltage, V_CE (V)
























































Transition Frequency vs. Collector Current
10000
3000
V_CE=5V
f=1MHz
1000
T_C=25Â¥
300
100
30
10
3
10.01 _{0.03 0.1 0.3 1}
3 10
Collector Current, I_C (A)




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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-023.C