2SD1060_08 Datasheet, PDF (2/5 Pages) Unisonic Technologies – NPN PLANAR SILICON TRANSISTOR

2SD1060
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25¥)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V_CBO
60
V
Collector to Emitter Voltage
V_CEO
50
V
Emitter to Base Voltage
V_EBO
6
V
Collector Current
I_C
5
A
Collector Current (Pulse)
I_CP
9
A
SOT-89
500
mW
Collector Dissipation
TO-126/TO-251
TO-252/TO-220
P_C
1
W
2
W
TO-92
625
mW
Junction Temperature
Storage Temperature
T_J
T_STG
+150
Ċ
-40 ~ +150
Ċ
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25¥)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BV_CBO I_C =1mA, I_E=0
BV_CEO I_C=1mA, R_BE =∞
BV_EBO I_C =0, I_E=1mA
I_CBO V_CB=40V, I_E=0
I_EBO V_EB=4V, I_C=0
h_FE1 V_CE=2V, I_C=1A
h_FE2 V_CE=2V, I_C=3A
f_T
V_CE =5V, I_C =1A
C_ob V_CB =10V, f=1MHz
V_CE(SAT) I_C=3A, I_B=0.3A
t_ON See specified test circuit
t_STG See specified test circuit
t_F See specified test circuit
„ CLASSIFICATION of h_FE1
RANK
RANGE


Q
70-140
R
100-200
MIN TYP MAX UNIT
60
V
50
V
6
V
0.1 mA
0.1 mA
70
360
30
30
MHZ
100
pF
0.4 V
0.1
µs
1.4
µs
0.2
µs
S
180-360
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R208-023.C