2SD1060_08 Datasheet, PDF (4/5 Pages) Unisonic Technologies – NPN PLANAR SILICON TRANSISTOR

2SD1060
„ TYPICAL CHARACTERISTICS
Collector Current vs. Collector-to-Emitter Voltage
10 _{450mA 400m3A50m3A00m2A50m2A00mA}
8
150mA
100mA
6
50mA
4
2
I_B=0
00 _{0.4 0.8 1.2 1.6 2.0 2.4}
Collector-to-Emitter Voltage, V_CE (V)


NPN SILICON TRANSISTOR
Collector Current vs. Base-to-Emitter Voltage
10
V_CE=2V
9
8
7
6
5
4
3
2
1
00 _{0.2 0.4 0.6 0.8 1.0 1.2 1.4}
Base-to-Emitter Voltage, V_BE (V)


Ta=80


Collector-Emitter Saturation Voltage vs.
Collector Current
10
I_C/I_B=20
5
3
2
1.0
5
3
2
Ta=80
0.1
-20Â¥
5
3
2
0.01
23 5
25Â¥
23 5
235
0.1
1.0
Collector Current, I_C (A)
2
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw


Base-Emitter Saturation Voltage vs.
Collector Current
10
7
5
3
2
1.0
I_C/I_B=10
7
5
I_C/I_B=20
3
2
2 35
23 5
235
2
0.1
1.0
10
Collector Current, I_C (A)


4 of 5
QW-R208-023.C