US108S Datasheet, PDF (4/5 Pages) Unisonic Technologies – SCRs

UTC US108S/N
SCR
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US108S)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.00
Tj=125℃
VD=0.67* VDRM
1.00
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US108S)
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
15.0
Tj=125℃
12.5 ^{VD=0.67* VDRM}
Rgk=220Ω
10.0
7.5
0.10
5.0
0.01
0
Rgk(Ω)
200 400 600 800 1000 1200 1400 1600 1800 2000
2.5
Cgk(nF)
0.0
0 20 40 60 80 100 120 140 160 180 200 220
Figure.8: Surge peak on-state current vs
number of cycles.
ITSM(A)
100
90
80
US108N
tp=10ms
One cycle
70
Non repetitive
60
Tj Iinitial=25℃
50 _US108S
40
Repetitive
30 _{Tcase=110℃}
20
10
Number of cycles
0
1
10
100
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
ITSM(A),I²t(A²s) ^{values of I 2t.}
1000
Tjinitial=25℃
1000
100
10
0.01
dI/dt
limitation
ITSM
US108N
US108S
I² t
tp(ms)
US108N
US108S
0.10
1.00
10.00
Fig.10: On-state characteristics(maximum values).
ITM(A)
50.0
Tj=max:
Vto=0.85V
10.0 ^Rd=46mΩ
Tj=Tjmax.
1.0
Tj=25℃
0.1
0.0
VTM(V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
UTC UNISONIC TECHNOLOGIES CO., LTD.
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