US108S Datasheet, PDF (2/5 Pages) Unisonic Technologies – SCRs

UTC US108S/N
SCR
UTC US108S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX. UNIT
Gate trigger Current
IGT VD = 12 V, RL =140Ω
200 µA
Gate trigger Voltage
VGT VD = 12 V, RL=140Ω
0.8
V
Gate non-trigger voltage
Reverse gate voltage
Holding Current
VGD VD = VDRM, RL = 3.3 kΩ, RGK = 220Ω
0.1
V
Tj = 125°C
VRG IRG = 10 µA
8
V
IH
IT = 50 mA, RGK = 1 kΩ
5
mA
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
IG = 1 mA ,RGK = 1 kΩ
VD = 65 % VDRM ,RGK = 220 Ω
Tj = 125°C
ITM = 16A, tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
VDRM = VRRM, RGK = 220 Ω
Tj = 25°C
Tj = 125°C
6
mA
5
V/µs
1.6
V
0.85
V
46
mΩ
5
µA
1
mA
UTC US108N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Gate trigger Current
IGT VD = 12 V, RL =33Ω
2
Gate trigger Voltage
VGT VD = 12 V, RL=33Ω
Gate non-trigger voltage
VGD VD = VDRM, RL = 3.3 kΩ, Tj = 125°C
0.2
Holding Current
IH
IT = 100 mA, Gate open
Latching Current
Circuit Rate Of Change Of
off-state Voltage
IL
IG = 1.2 IGT
dV/dt VD = 67 % VDRM , Gate open,Tj = 125°C
150
On-state voltage
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
VTM
Vt0
Rd
IDRM
IRRM
ITM = 16A, tp = 380 µs, Tj = 25°C
Tj = 125°C
Tj = 125°C
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MAX.
15
1.3
30
70
1.6
0.85
46
UNIT
mA
V
V
mA
mA
V/µs
V
V
mΩ
5
µA
2
mA
THERMAL RESISTANCES
PARAMETER
Junction to case (DC)
Junction to ambient (DC)
SYMBOL
Rth(j-c)
Rth(j-a)
VALUE
20
60
UNIT
K/W
K/W
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-012,B