US108S Datasheet, PDF (3/5 Pages) Unisonic Technologies – SCRs

UTC US108S/N
SCR
Fig.1:Maximum average power dissipation vs
average on-state current
p(w)
8
α=180°
7
6
5
4
3
2
1
0
0
1
360°
IT(av)(A)
α
2
3
4
5
6
Figure.2:Average and D.C. on-state current
vs case temperature
IT(av)(A)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
25
DC
α=180°
Tcase(℃)
50
75
100
125
Figure.3: Relative variation of thermal
impedance junctio to case vs pulse duration
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
0.2
0.1
1E-3
tp(s)
1E-2
1E-1
1E+0
Figure.4:Relative variation of gate trigger current,holding
current and latching vs junction temperature .(US108S)
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.0
1.8
1.6
IGT
1.4
1.2
IH&IL
1.0
Rgk=1kΩ
0.8
0.6
0.4
0.2
Tj(℃)
0.0
-40 -20 0 20 40 60 80 100 120 140
Figure.4-2:Relative variation of gate trigger current,holding
current and latching vs junction temperature .(US108N)
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
Tj(℃)
40
60
IH&IL
80
100 120 140
Figure.5:Relative variation of holding current vs gate-
cathode resistance(typical values) (US108S)
IH(Rgk)/IH(Rgk=1kΩ)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Rgk(kΩ)
0.5
0.0
1E-2
1E-1
1E+0
TJ=25℃
1E+1
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-012,B