UF8010 Datasheet, PDF (4/6 Pages) Unisonic Technologies – 80 Amps, 100 Volts N-CHANNEL POWER MOSFET

UF8010
Preliminary
„ TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
Power MOSFET
D.U.T.
+
2
-
+
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
3
· Low Leakage Inductance
Current Transformer
-
-4 ₊
1
R_G
· dv/dt controlled by RG
· Driver same type as D.U.T
· ISD controlled by Duty Factor “D”
· D.U.T. – Device Under Test
+
- ^VDD
* Reverse Polarity of D.U.T. for P-Channel
1 Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V_GS=10V*
2 _{D.U.T. ISD Waveform}
Reverse
Recovery
Body Diode Forward
Current
3 _{D.U.T. VDS Waveform}
Current _di/dt
Diode Recovery
dv/dt
V_DD
Re-Applied
Voltage
Body Diode Forward Drop
4 _{Inductor Current}
Ripple≤5％
I_SD
* V_GS = 5.0V for Logic Level Devices
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-348.a