UF8010 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 80 Amps, 100 Volts N-CHANNEL POWER MOSFET

UF8010
Preliminary
Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V_SD
I_S=80 A ,V_GS =0 V,
T_J = 25°C (Note 1)
1.3 V
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1,2)
Reverse Recovery Time
Reverse Recovery Charge
I_S
I_SM
t_RR
I_F=80 A, V_DD=50V, T_J = 150℃
Q_RR
di/dt = 100 A/μs (Note 1)
80 A
320 A
99 150 ns
460 700 nC
Notes: 1. Pulse width ≤ 300μs; duty cycle ≤ 2%
2. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-348.a