UF8010 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 80 Amps, 100 Volts N-CHANNEL POWER MOSFET

UF8010
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
Continuous Drain Current (V_GS=10V,T_C=25°C)
Pulsed Drain Current
Avalanche Energy
Single Pulse (Note 2,3)
Repetitive
Avalanche Current
Peak Diode Recovery dv/dt (Note 4)
V_GS
I_D
I_DM
E_AS
E_AR
I_AR
dv/dt
±20
80 (Note 2)
320
310
26
45
16
V
A
A
mJ
mJ
A
V/ns
Power Dissipation (T_C=25°C)
Derating above 25°C
260
W
P_D
1.8
W/°C
Junction Temperature
T_J
+175
°C
Storage Temperature
T_STG
-55 ~ + 175
°C
Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
3. Starting T_J = 25°C, L = 0.31mH, R_G =25Ω, I_AS = 45A.
4. I_SD≤45A, di/dt≤110A/μs, V_DD≤BV_DSS, T_J≤ 175°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
MIN TYP
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
MAX
62
0.57
UNIT
°C/W
°C/W
PARAMETER
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Current
Gate-Source Reverse Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BV_DSS
I_DSS
I_GSS
V_GS =0 V, I_D =250μA
V_DS=100V,V_GS =0V
V_GS = 20 V
V_GS = -20 V
100
V
20 μA
200 nA
-200 nA
V_GS(TH)
R_DS(ON)
V_DS = V_GS, I_D = 250μA
V_GS = 10 V, I_D = 45A (Note 1)
2.0
4.0 V
12 15 mΩ
C_ISS
3830
pF
C_OSS
V_DS =25 V,V_GS =0V, f =1.0MHz
480
pF
C_RSS
59
pF
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G
Q_GS
Q_GD
V_DD =50V,I_D = 80A, R_G = 39Ω
V_GS = 10V (Note 1)
V_DS=80V, V_GS=10V
I_D= 80A (Note 1)
15
ns
130
ns
61
ns
120
ns
81 120 nC
22
nC
26
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-348.a