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| UF640_15 Datasheet, PDF (4/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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UF640
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
200
Drain-Source Leakage Current
IDSS VDS = Rated BVDSS, VGS = 0V
Gate-Source Leakage Current
IGSS VGS= ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(THR) VGS=VDS, ID=250μA
2
Drain-Source On Resistance
RDS(ON) VGS=10V, ID=10A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG(TOT)
QGS
QGD
VDD=100V,IDâ18A, RG=9.1â¦,RL=5.4â¦,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
VGS=10V, IDâ18A, VDS=0.8 x Rated
BVDSS Gate Charge is Essentially
Independent of Operating
Temperature IG(REF) = 1.5mA
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
VSD TJ=25°C, IS=18A, VGS=0V,
Continuous Source Current
(body diode)
IS
Integral Reverse p-n Junction
Diode in the MOSFET
Drain
TYP MAX UNIT
V
25 μA
±100 nA
4
V
0.14 0.18 â¦
805
pF
240
pF
46
pF
40 52 ns
58 72 ns
127 152 ns
86 104 ns
89 110 nC
9
nC
24
nC
2.0 V
18 A
Pulse Source Current (body diode)
(Note)
ISM
Gate
Sourse
Reverse Recovery Time
trr
TJ=25°C, IS=18A, dIS/dt=100A/μs
Reverse Recovery Charge
QRR TJ=25°C, IS=18A, dIS/dt=100A/μs
Note: Pulse Test: Pulse width ⤠300μs, duty cycle ⤠2%.
72 A
120 240 530 ns
1.3 2.8 5.6 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-066.I
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