UF640_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UF640
Power MOSFET
 ABSOLUTE MAXIMUM RATING (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (R_GS=20kΩ)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy Rating (Note 2)
SOT-223
V_DSS
V_DGR
V_GSS
I_D
I_DM
E_AS
200
V
200
V
±20
V
18
A
72
A
242
mJ
66
TO-220
123
Maximum Power
Dissipation
TO-220F
TO-220F1/TO-220F2
P_D
40
42
W
TO-252
83
TO-262/TO-263
139
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, V_DD=50V, R_G=25Ω, peak I_AS=12A, starting T_J=25°C
3. Pulse width limited by T_J(MAX)
 THERMAL DATA
PARAMETER
SOT-223
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2
TO-262/TO-263
TO-252
SOT-223
TO-220
Junction to Case
TO-220F
TO-220F1/TO-220F2
TO-252
TO-262/TO-263
SYMBOL
θ_JA
θ_JC
RATINGS
57
62.5
110
1.8
1.01
3.1
2.9
1.5
0.9
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-066.I