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UF640_15 Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UF640
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
 DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640 suitable for resonant and PWM converter
topologies.
 FEATURES
* RDS(ON) < 0.18Ω @ VGS=10V, ID=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
Power MOSFET
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