MMBT1616 Datasheet, PDF (4/4 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

MMBT1616/A
TYPICAL CHARACTERISTICS(Cont.)



Base-Emitter Saturation Voltage
1000^{Collector-Emitter Saturation Voltage}
500
I_C=20·I_B
300
100
V_{BE (sat )}
50
30
10
5
V_{CE(sat )}
3
1
0.01 0.03 0.05 0.1 0.30.5 1 3 5 10
Collector Current, I_C (A)




Power Derating
0.8
0.6
NPN SILICON TRANSISTOR
Safe Operating Area
10
5
3
1
0.5
2001m0ms s
P
=1m
s
0.3
DC
0.1
0.05
0.03
0.01
1
3 5 10 30 50 100 300
Collector-Emitter Voltage, V_CE (V)

0.4
0.2
0 25 50 75 100 125 150 175200
Ambient Temperature, T_A (Â¥)































UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-036.B