MMBT1616 Datasheet, PDF (3/4 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

MMBT1616/A
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
1000
500
300
Collector Output Capacitance
IE=0
f=1.0MHz
100
50
30
10
5
3
1 3 5 10 30 50 100 300
Collector-Base Voltage, VCB (V)
Switching Time
10
5
V_CC=10V
3
IC=10·IB1=-10·IB2
1
0.5
tStG
0.3
0.1
tF
0.05
0.03
t_ON
0.01
0.001 0.003 0.01 0.030.05 0.1 0.3 0.5 1
Collector Current, IC (A)
Static Characteristic
1.0 _IB=5.0mA
IB= 4 .5m A
I
=4.
B
0mA
IB=3.5mA _IB=3.0mA
0.8
IB =2.5 mA
IB =2 .0m A
0.6
IB =1 .5m A
0.4
IB =1.0 mA
0.3
IB=0. 5mA
0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter Voltage, V_CE (V)
Current Gain-Bandwidth Product
1000
500
VCE=2V
300
100
50
30
10
5
3
1
0.01 0.03 0.1 0.3 1 3 5 10
Collector Curren,t I_C (A)






Static Characteristic
100
I_B=300µA
80
I_B=250µA
60
I_B=200µA
40
IB=150µA
I_B=100µA
20
IB=50µA
0
2
4
6
8 10
Collector-Emitter Voltage, V_CE (V)



1000
500
300
DC Current Gain
V_CE=2V
100
50
30
10
5
3
1
0.01 0.030.050.1 0.3 0.5 1 3 5 10
Collector Current, I_C (A)




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QW-R206-036.B