MMBT1616 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

MMBT1616/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
1616
60
V
1616A
V_CBO
120
V
Collector-Emitter Voltage
1616
50
V
1616A
V_CEO
60
V
Emitter to Base Voltage
V_EBO
6
V
Collector Current
DC
I_C
1
A
Pulse*
I_C
2
A
Total Power Dissipation (Ta=25Ċ)
P_C
350
mW
Junction Temperature
T_J
+150
Ċ
Storage Temperature
T_STG
-55 ~ +150
Ċ
Note (*) Pulse width≤10ms, Duty cycle<50%
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25Â¥)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
SYMBOL
I_CBO
I_EBO
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
TEST CONDITIONS
V_CB=60V
V_EB= 6V
I_C=1A, I_B=50mA
I_C=1A, I_B=50mA
V_CE=2V, I_C=50mA
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
h_FE1
h_FE2
f_T
C_ob
t_ON
t_S
t_F
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1A
V_CE=2V, I_C=100mA
V_CB=10V, f=1MHz
V_CE=10V, I_C=100mA
I_B1=-I_B2=10mA
V_BE(OFF)=-2 ~ -3V
CLASSIFICATION OF h_FE1
RANK
h_FE1


Y
135-270
G
200-400
MIN TYP MAX UNIT
100 nA
100 nA
0.15 0.3
V
0.9 1.2
V
600 640 700 mV
135
600
135
400
81
100 160
MHz
19
pF
0.07
us
0.95
us
0.07
us
L
300-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-036.B