 English |
|
|
|
|
|
|
|
| 3N65K-MK Datasheet, PDF (4/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
| |||
| ◁ |
3N65K-MK
Preliminary
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 650 V, VGS = 0 V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
VGS = 10V, ID = 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD
VDD = 30V, ID = 0.5A,
RG = 25⦠(Note 1, 2)
VDS= 50V,ID= 1.3A,
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 3.0 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Notes: 1. Pulse Test: Pulse width ⤠300μs, Duty cycleâ¤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650
V
10 μA
100 nA
-100 nA
0.6
V/°C
2.5
4.5 V
4.0 â¦
388 500 pF
41 65 pF
5.1 11 pF
43
ns
20
ns
94
ns
22
ns
14 16 nC
4.2
nC
1.6
nC
1.4 V
3.0 A
12 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-009.b
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese