 English |
|
|
|
|
|
|
|
| 3N65K-MK Datasheet, PDF (1/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
| |||
|
UNISONIC TECHNOLOGIES CO., LTD
3N65K-MK
Preliminary
3A, 650V N-CHANNEL
POWER MOSFET
ï® DESCRIPTION
The UTC 3N65K-MK is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
ï® FEATURES
* RDS(ON) < 4.0⦠@ VGS = 10V, ID = 1.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
ï® SYMBOL
Power MOSFET
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-009.b
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese