3N65K-MK Datasheet, PDF (3/7 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

3N65K-MK
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
650
V
V_GSS
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
I_AR
3.0
A
I_D
3.0
A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
I_DM
E_AS
E_AR
dv/dt
12
A
75
mJ
7.5
mJ
4.5
V/ns
TO-220
75
W
TO-220F/TO-220F1
TO-220F3
34
W
Power Dissipation
TO-220F2
P_D
35
W
TO-251/TO-251S
TO-251S2/TO-251S4
50
W
TO-252/TO-252D
TO-220
0.6
W/°C
TO-220F/TO-220F1
TO-220F3
0.27
W/°C
Derate above 25°C
TO-220F2
P_D
0.28
W/°C
TO-251/TO-251S
TO-251S2/TO-251S4
0.4
W/°C
TO-252/TO-252D
Junction Temperature
Operating Temperature
T_J
T_OPR
+150
°C
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J.
3. L=16.6mH, I_AS=3A, V_DD=50V, R_G=25 Ω, Starting T_J = 25°C
4. I_SD≤3.0A, di/dt≤200A/μs, V_DD≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
SYMBOL
θ_JA
θ_JC
RATING
62.5
110
1.67
3.68
3.58
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-009.b