UG25N120 Datasheet, PDF (3/4 Pages) Unisonic Technologies – 1200V NPT TRENCH IGBT

UG25N120
Preliminary
Insulated Gate Bipolar Transistor
 ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Off Characteristics
Collector Cut-Off Current
G-E Leakage Current
I_CES
I_GES
V_CE=V_CES, V_GE=0V
V_GE=V_GES, V_CE= 0V
On Characteristics
Gate to Emitter Threshold Voltage
V_GE(TH) I_C=25mA, V_CE=V_GE
I_C=25A, V_GE=15V
Collector to Emitter Saturation Voltage
V_CE(SAT) I_C=25A, V_GE=15V, T_C=125°C
I_C=50A, V_GE=15V
Dynamic Characteristics
Input Capacitance
C_IES
Output Capacitance
Reverse Transfer Capacitance
C_OES
C_RES
V_CE=30V, V_GE=0V, f=1MHz
Switching Characteristics
Turn-On Delay Time
t_DON)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
t_R
t_DOFF)
t_F
E_ON
V_CC=600V, I_C=25A, R_G=10Ω,
V_GE=15V, Inductive Load,
T_C=25°C
Turn-Off Switching Loss
Total Switching Loss
E_OFF
E_TS
Turn-On Delay Time
Rise Time
t_DON)
t_R
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
t_DOFF)
t_F
E_ON
E_OFF
V_CC=600V, I_C=25A, R_G=10Ω,
V_GE=15V, Inductive Load,
T_C=125°C
Total Switching Loss
E_TS
Total Gate Charge
Q_G
Gate-Emitter Charge
Gate-Collector Charge
Q_GE V_CE=600V, IC=25A, V_GE=15V
Q_GC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward Voltage Drop
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V_FM I_F=25A
t_rr
I_rr
I_F=25A,
dI/dt=200A/μS
Q_RR
T_C=25°C
T_C=125°C
T_C=25°C
T_C=125°C
T_C=25°C
T_C=125°C
T_C=25°C
T_C=125°C
MIN TYP MAX UNIT
3 mA
±250 mA
3.5 5.5 7.5 V
2.0 2.5 V
2.15
V
2.65
V
3700
pF
130
pF
80
pF
50
ns
60 90 ns
190
ns
100 180 ns
4.1 6.2 mJ
0.96 1.5 mJ
5.06 7.7 mJ
50
ns
60
ns
200
ns
154
ns
4.3 6.9 mJ
1.5 2.4 mJ
5.8 9.3 mJ
200 300 nC
15 23 nC
100 150 nC
2.0 3.0 V
2.1
V
235 350 ns
300
ns
27 40 A
31
A
3130 4700 nC
4650
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-050.a