UG25N120 Datasheet, PDF (1/4 Pages) Unisonic Technologies – 1200V NPT TRENCH IGBT

UNISONIC TECHNOLOGIES CO., LTD
UG25N120
Preliminary
Insulated Gate Bipolar Transistor
1200V NPT TRENCH IGBT
 DESCRIPTION
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The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar
Transistor. it uses UTC’s advanced technology to provide customers
with high switching speed, high avalanche ruggedness, low saturation
voltage and low switching loss, etc.
The UTC UG25N120 is suitable for the resonant or soft switching
applications.
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 FEATURES
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: V_{CE(sat), typ} =2.0V @ I_C=25A and T_C =25°C
* Low switching loss: E_{off, typ}=0.96mJ @ I_C=25A and T_C=25°C
 SYMBOL
TO-220
TO-247
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UG25N120L-TA3-T
UG25N120G-TA3-T
TO-220
UG25N120L-T47-T
UG25N120G-T47-T
TO-247
Note: Pin Assignment: G: Gate C: Collector E: Emitte
Pin Assignment
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2
3
G
C
E
G
C
E
UG25N120L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Free
(1) T: Tube
(2) TA3: TO-220, T47: TO-247
(3) L: Lead Free, G: Halogen Free
Packing
Tube
Tube
 MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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