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| UG25N120 Datasheet, PDF (2/4 Pages) Unisonic Technologies – 1200V NPT TRENCH IGBT | |||
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UG25N120
Preliminary
Insulated Gate Bipolar Transistor
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
1200
V
VGES
±20
V
Continuous Collector Current
TC=25°C
TC=100°C
IC
50
A
25
A
Collector Current Pulsed (Note 1)
ICM
75
A
Diode Continuous Forward Current (TC=100°C)
IF
25
A
Diode Maximum Forward Current
IFM
Power Dissipation
TC=25°C
TO-220
TO-247
PD
150
A
89
200
W
Operating Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
2. Pulse width limited by maximum junction temperature.
ï® THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-247
TO-220
TO-247
SYMBOL
θJA
θJC
RATINGS
62.5
40
1.4
0.62
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-050.a
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