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UF830K Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
UF830K
Preliminary
Power MOSFET
 INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL MIN TYP MAX UNIT
Internal Drain Inductance
Measured from the contact screw on tab to center of die
Measured from the drain lead(6mm from package) to center of die
LD
3.5
nH
4.5
nH
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
LS
7.5
nH
Remark: Modified MOSFET symbol showing the internal devices inductances as below.
 SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
Continuous Source to Drain Current
Pulse Source to Drain Current
Reverse Recovery Time
VSD
TJ=25°C,ISD=4.5A, VGS=0V(Note 1)
ISD
ISDM
(Note 2)
trr
TJ=25°C, ISD=4.5A, dI/dt=100A/μs 180
Reverse Recovery Charge
QRR
TJ=25°C, ISD=4.5A, dI/dt=100A/μs 0.96
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX
1.6
5.5
18
760
4.3
UNIT
V
A
A
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-A77.b