UF830K Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD
UF830K
Preliminary
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET
 DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
 FEATURES
* R_DS(ON)<1.5Ω @ I_D=2.5A
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
 SYMBOL
Power MOSFET
1
TO-220
1
TO-220F
1
1
TO-220F2
TO-252
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UF830KL-TA3-T
UF830KG-TA3-T
TO-220
UF830KL-TF3-T
UF830KG-TF3-T
TO-220F
UF830KL-TF2-T
UF830KG-TF2-T
TO-220F2
UF830KL-TN3-R
UF830KG-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
 MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F2
TO-252
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Copyright © 2014 Unisonic Technologies Co., Ltd
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