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| UF830K Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
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UF830K
Preliminary
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RGS=20kâ¦, TJ=25°C ~125°C)
Gate to Source Voltage
VDGR
VGS
500
V
±30
V
Drain Current
Continuous
ID
Pulsed
IDM
4.5
A
18
A
TO-220
73
W
Power Dissipation
(TC = 25°C)
TO-220F
TO-220F2
PD
TO-252
38
W
40
50
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
Junction Temperature
TJ
300
mJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25â¦, peak IAS=4.5A
ï® THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F2
TO-252
TO-220
Junction to Case
TO-220F
TO-220F2
TO-252
SYMBOL
θJA
θJc
RATINGS
62.5
110
1.71
3.31
3.125
2.5
ï® ELECTRICAL SPECIFICATIONS (TA =25°C, unless otherwise specified.)
UNIT
°C/W
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
500
Gate Threshold Voltage
VGS(TH) VGS=VDS, ID=250μA
2.0
On-State Drain Current (Note 1)
ID(ON) VDS>ID(ON)ÃRDS(ON)MAX, VGS=10V 4.5
Drain-Source Leakage Current
VDS= Rated BVDSS, VGS=0V
IDSS VDS=0.8ÃRated BVDSS
VGS=0V, TJ= 125°C
Gate-Source Leakage Current
IGSS VGS=±30V
Static Drain-Source On-State Resistance
RDS(ON) ID=2.5A, VGS=10V (Note 2)
Forward Transconductance (Note 1)
gFS VDSâ¥10V, ID=2.7A
2.5
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD=30V, IDâ0.5A
RGS=12â¦, RL =54⦠(Note 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS=10V, ID=1.3A
VDS=50V
IG(REF)=100μA (Note 3)
Input Capacitance
CISS
Output Capacitance
COSS VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
Notes: 1. Pulse Test: Pulse widthâ¤300μs, Duty Cycleâ¤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
TYP MAX UNIT
V
4.0 V
A
25 μA
250 μA
±100 nA
1.23 1.5 â¦
4.2
S
48 60 ns
48 60 ns
40 53 ns
44 60 ns
14 32 nC
5.4
nC
6
nC
590
pF
80
pF
15
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-A77.b
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