UF640_11 Datasheet, PDF (3/5 Pages) Unisonic Technologies – 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UF640
Power MOSFET
„ ELECTRICAL CHARACTERISTICS(Cont.) (T_C = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G(TOT)
Q_GS
Q_GD
V_DD=100V,I_D≈18A, R_G=9.1Ω,R_L=5.4Ω,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
V_GS=10V, I_D≈18A, V_DS=0.8 x Rated
BV_DSS Gate Charge is Essentially
Independent
of
Operating
Temperature I_G(REF) = 1.5mA
„ ELECTRICAL CHARACTERISTICS(Cont.)
TYP
13
50
46
35
43
8
22
MAX UNIT
21 ns
77 ns
68 ns
54 ns
64 nC
nC
nC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Measured From Modified MOSFET
the Contact Screw Symbol Showing
on Tab to
the Internal
Center of Die
Devices
Internal Drain Inductance
L_D Measured From Inductances
the Drain Lead,
6mm (0.25in)
From Package to
Center of Die
Measured From
the Source Lead,
Internal Source Inductance
L_S 6mm (0.25in) from
Header to Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
V_SD T_J = 25℃, I_S = 18A, V_GS = 0V,
Continuous Source Current
(body diode)
I_S
Integral Reverse p-n Junction
Diode in the MOSFET
Drain
TYP
3.5
4.5
7.5
MAX UNIT
nH
nH
nH
2.0 V
18 A
Pulse Source Current (body diode)
(Note)
I_SM
Gate
Sourse
Reverse Recovery Time
t_rr
T_J=25℃, I_S=18A, dI_S/dt=100A/μs
Reverse Recovery Charge
Q_RR T_J=25℃, I_S=18A, dI_S/dt=100A/μs
Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
72 A
120 240 530 ns
1.3 2.8 5.6 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-066.E