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| UF640_11 Datasheet, PDF (2/5 Pages) Unisonic Technologies – 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET | |||
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UF640
Power MOSFET
 ABSOLUTE MAXIMUM RATING (TC = 25â, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RGS=20kâ¦)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy Rating (Note 2)
TO-220
VDSS
VDGR
VGSS
ID
IDM
EAS
200
V
200
V
±20
V
18
A
72
A
580
mJ
123
TO-220F
Maximum Power Dissipation TO-220F2
PD
TO-252
40
42
W
83
TO-263
139
Junction Temperature
Storage Temperature
TJ
TSTG
+150
â
-55 ~ +150
â
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, VDD=50V, RG=25â¦, peak IAS=18A, starting TJ=25â.
3. Pulse width limited by TJ(MAX)
 THERMAL DATA
PARAMETER
TO-220/ TO-220F
Junction to Ambient
TO-220F2/ TO-263
TO-252
TO-220
TO-220F
Junction to Case
TO-220F2
TO-252
TO-263
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
110
1.01
3.1
2.9
1.5
0.9
 ELECTRICAL CHARACTERISTICS (TC = 25â, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On-State Drain Current
Drain-Source On Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=250μA, VGS=0V
VDS = Rated BVDSS, VGS = 0V
VGS= ±20V
VGS(THR)
ID(ON)
RDS(ON)
VGS=VDS, ID=250μA
VDS >ID(ON) x RDS(ON)MAX,VGS=10V
ID=10A, VGS=10V
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
MIN TYP MAX UNIT
200
V
25 μA
±100 nA
2
4
V
18
A
0.14 0.18 â¦
1275
pF
400
pF
100
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-066.E
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