UF640_11 Datasheet, PDF (1/5 Pages) Unisonic Technologies – 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UF640
18 A, 200 V, 0.18 OHM,
N-CHANNEL POWER MOSFET
„ DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640 suitable for resonant and PWM converter topologies.
„ FEATURES
* R_DS(ON) =0.18Ω@V_GS = 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C_RSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
2.Drain
1
TO-252
1
1
1
Power MOSFET
1
TO-263
TO-220
TO-220F
TO-220F2
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640L-TA3-T
UF640G-TA3-T
UF640L-TF2-T
UF640G-TF2-T
UF640L-TF3-T
UF640G-TF3-T
UF640L-TN3-R
UF640G-TN3-R
UF640L-TN3-T
UF640G-TN3-T
UF640L-TQ2-R
UF640G-TQ2-R
UF640L-TQ2-T
UF640G-TQ2-T
Package
TO-220
TO-220F2
TO-220F
TO-252
TO-252
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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Tape Reel
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Copyright © 2011 Unisonic Technologies Co., Ltd
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