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| UF640V Datasheet, PDF (3/5 Pages) Unisonic Technologies – 18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET | |||
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UF640V
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS = Rated BVDSS, VGS = 0V
Gate-Source Leakage Current
ON CHARACTERISTICS
IGSS
VGS= ±20V
Gate Threshold Voltage
VGS(TH) VGS=VDS, ID=250μA
Drain-Source On Resistance
DYNAMIC PARAMETERS
RDS(ON) ID=10A, VGS=10V
Input Capacitance
CISS
Output Capacitance
COSS VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
tD(ON)
tR
tD(OFF)
tF
VDD=100V,IDâ18A,
RG=9.1â¦,RL=5.4â¦,
MOSFET Switching Times are
Essentially Independent of
Operating Temperature
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG(TOT)
QGS
QGD
VGS=10V, IDâ18A, VDS=0.8 x Rated
BVDSS Gate Charge is Essentially
Independent of Operating
Temperature IG(REF) = 1.5mA
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note)
VSD
TJ=25°C, IS=18A, VGS=0V,
Continuous Source Current
(body diode)
Integral Reverse p-n Junction
IS
Diode in the MOSFET
Drain
MIN TYP MAX UNIT
200
V
25 μA
±100 nA
1.0
2.5 V
0.14 0.18 â¦
1275
pF
400
pF
100
pF
13 21 ns
50 77 ns
46 68 ns
35 54 ns
43 64 nC
8
nC
22
nC
2.0 V
18 A
Pulse Source Current (body diode)
(Note)
ISM
Gate
72 A
Sourse
Reverse Recovery Time
trr
TJ=25°C, IS=18A, dIS/dt=100A/μs
Reverse Recovery Charge
QRR TJ=25°C, IS=18A, dIS/dt=100A/μs
Note: Pulse Test: Pulse width ⤠300μs, duty cycle ⤠2%.
120 240 530 ns
1.3 2.8 5.6 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-916, A
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