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UF640V Datasheet, PDF (2/5 Pages) Unisonic Technologies – 18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET
UF640V
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RGS=20kΩ)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy Rating (Note 2)
Maximum Power Dissipation
TO-3P
TO-220
VDSS
VDGR
VGSS
ID
IDM
EAS
PD
200
V
200
V
±20
V
18
A
72
A
580
mJ
150
W
123
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C.
3. Pulse width limited by TJ(MAX)
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-3P
TO-220
TO-3P
TO-220
SYMBOL
θJA
θJC
RATINGS
50
62.5
0.833
1.01
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-916, A