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| UF640V Datasheet, PDF (1/5 Pages) Unisonic Technologies – 18A, 200V, 0.18OHM N-CHANNEL POWER MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
UF640V
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
 DESCRIPTION
These kinds of n-channel power MOSFET field effect transistor
have low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640V suitable for resonant and PWM converter
topologies.
 FEATURES
* RDS(ON) =0.18â¦@VGS = 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640VL-T3P-T
UF640VG-T3P-T
UF640VL-TA3-T
UF640VG-TA3-T
Package
TO-3P
TO-220
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-916, A
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