UF640 Datasheet, PDF (3/5 Pages) Unisonic Technologies – 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UF640
MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Measured
From the
Contact Screw
on Tab to
Center of Die Modified MOSFET Symbol
Internal Drain Inductance
L_D Measured
Showing the Internal
From the Drain Devices Inductances
Lead, 6mm
(0.25in) From
D
Package to
L_D
Center of Die
Measured
From the
G
LS
Source Lead,
S
Internal Source Inductance
L_S 6mm (0.25in)
from Header to
Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note 1)
V_SD T_J = 25Ċ, I_S = 18A, V_GS = 0V,
Continuous Source Current (body
diode)
I_S
Integral Reverse p-n Junction
Diode in the MOSFET
Drain
TYP
3.5
4.5
7.5
MAX UNIT
nH
nH
nH
2.0 V
18 A
Pulse Source Current (body diode)
(Note 1)
I_SM
Gate
72 A
Sourse
Reverse Recovery Time
Reverse Recovery Charge
t_RR
T_J = 25Ċ, I_S = 18A,
dI_S/dt = 100A/µs
Q_RR
T_J = 25Ċ, I_S = 18A,
dI_S/dt = 100A/µs
120 240 530 ns
1.3 2.8 5.6 µC
Note 1. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance
curve.
3. L = 3.37mH, V_DD = 50V, R_G = 25Ω, peak I_AS = 18A, starting T_J = 25Ċ.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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