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UF640 Datasheet, PDF (2/5 Pages) Unisonic Technologies – 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET
UF640
MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25Ċ, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
DrainSource Voltage
VDSS
200
V
DrainGate Voltage (RGS = 20kΩ)
VDGR
200
V
GateSource Voltage
VGSS
±20
V
Continuous Drain Current
TC = 25Ċ
TC = 100Ċ
ID
18
A
11
A
Pulsed Drain Current (Note )
IDM
Single Pulse Avalanche Energy Rating (Note )
EAS
72
A
580
mJ
Maximum Power Dissipation
Dissipation Derating Factor
125
W
PD
1.0
W/Ċ
Junction Temperature
TJ
+150
Ċ
Storage Temperature
TSTG
-55 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Channel to Ambient
Thermal Resistance, Channel to Case
SYMBOL
θJA
θJC
MIN
TYP
ELECTRICAL CHARACTERISTICS (TC = 25Ċ, unless otherwise specified)
MAX
62
1
UNIT
°C/W
°C/W
PARAMETER
DrainSource Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
On-State Drain Current
Gate-Source Leakage Current
Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate-Source Charge
Gate-Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
VGS(THR) VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
IDSS VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125Ċ
ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS = 10V
IGSS VGS = ±20V
RDS(ON) ID = 10A, VGS = 10V
gFS VDS ≥ 10V, ID = 11A
CISS
COSS VDS = 25V, VGS = 0V, f = 1MHz
CRSS
QG(TOT)
QGS
QGD
VGS = 10V, ID ≈ 18A, VDS = 0.8 x
Rated BVDSS  Gate Charge is
Essentially Independent of
Operating Temperature IG(REF) =
1.5mA
tD(ON)
tR
t D(OFF)
tF
VDD = 100V, ID ≈ 18A, RGS = 9.1Ω,
RL = 5.4Ω,
MOSFET Switching Times are
Essentially Independent of
Operating Temperature
MIN
200
2
18
6.7
TYP
0.14
10
1275
400
100
43
8
22
13
50
46
35
MAX
4
25
UNIT
V
V
µA
250 µA
A
±100 nA
0.18 Ω
S
pF
pF
pF
64 nC
nC
nC
21 ns
77 ns
68 ns
54 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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