UF640 Datasheet, PDF (1/5 Pages) Unisonic Technologies – 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UF640


18 A, 200 V, 0.18 OHM,
N-CHANNEL POWER MOSFET
MOSFET
DESCRIPTION
These kinds of n-channel power mos field effect transistor have
low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640 suitable for resonant and PWM converter topologies.
FEATURES
* R_DS(ON) =0.18Ω@V_GS = 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (C_RSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1
TO-220
1
TO-220F
*Pb-free plating product number: UF640L
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UF640-TA3-T
UF640L-TA3-T
UF640-TF3-T
UF640L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
UF640L-TA 3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating, Blank: Pb/Sn
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