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| UF630_11 Datasheet, PDF (3/7 Pages) Unisonic Technologies – 200V, 9A N-CHANNEL POWER MOSFET | |||
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UF630
Power MOSFET
 ELECTRICAL SPECIFICATIONS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
200
On-State Drain Current (Note 1)
ID(ON)
VDS > ID(ON) x RDS(ON)MAX,
VGS = 10V
9
Drain-Source Leakage Current
IDSS
VDS = Rated BVDSS, VGS = 0V
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250μA
2
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tD(ON)
tR
tD(OFF)
tF
VDD = 90V, IDâ9A, RGS = 9.1â¦,
VGS = 10V, RL = 9.6â¦
(Note 1, 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VGS = 10V, ID = 9A,
VDS = 0.8 x Rated BVDSS
IG(REF) = 1.5mA
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS = 9.0A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
IS = 9.0A, dIS/dt = 100A/μs
Reverse Recovery Charge
QRR
(Note 1)
Notes: 1. Pulse Test: Pulse width â¤300μs, Duty cycleâ¤2%
Notes: 2. Essentially independent of operating temperature
TYP
0.25
600
250
80
19
10
9
450
3
MAX UNIT
V
A
10 μA
100 nA
-100 nA
4V
0.4 â¦
pF
pF
pF
30 ns
50 ns
50 ns
40 ns
30 nC
nC
nC
2V
9A
36 A
ns
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-049,F
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