UF630_11 Datasheet, PDF (1/7 Pages) Unisonic Technologies – 200V, 9A N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UF630
Power MOSFET
200V, 9A N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
„ FEATURES
* R_DS(ON) = 0.4Ω@ V_GS = 10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C_RSS = typical 80 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability
„ SYMBOL
2.Drain
1
TO-251
1
TO-220
1
1
TO-220F
TO-220F1
1
TO - 252
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF630L-TA3-T
UF630G-TA3-T
UF630L-TF1-T
UF630G-TF1-T
UF630L-TF3-T
UF630G-TF3-T
UF630L-TM3-T
UF630G-TM3-T
UF630L-TN3-R
UF630G-TN3-R
UF630L-TN3-T
UF630G-TN3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
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Copyright © 2011 Unisonic Technologies Co., Ltd
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