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| UF630_11 Datasheet, PDF (2/7 Pages) Unisonic Technologies – 200V, 9A N-CHANNEL POWER MOSFET | |||
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UF630
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20kâ¦, TJ =25°C ~125°C)
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulse Avalanche Energy (Note 3)
TO-220
Power Dissipation
TO-220F1/ TO-220F
TO-251/ TO-252
VDSS
VDGR
VGSS
ID
IDM
EAS
PD
200
V
200
V
±20
V
9
A
36
A
150
mJ
75
51
W
54
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 4mH, IAS = 8.3A, VDD = 20V, RG = 25 â¦, Starting TJ = 25°C
 THERMAL DATA
PARAMETER
TO-220/ TO-220F1/ TO-220F
Junction to Ambient
TO-251/ TO-252
TO-220
Junction to Case
TO-220F1/ TO-220F
TO-251/ TO-252
SYMBOL
θJA
θJC
RATING
80
110
1.67
2.45
2.3
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-049,F
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