PZTA44 Datasheet, PDF (3/4 Pages) NXP Semiconductors – NPN high-voltage transistor

UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC current gain
140
120
100
VCE=10V
80
60
40
20
0
-20
-40
100
101
102
103
104
Ic,Collector current(mA)
Fig.2 Turn-on switching times
101
VCE=150V
Ic/IB=10
Ta=25° C
VBE(OFF)=4V
0
10
Tf
-1
10
100
Td
101
102
Ic,Collector current(mA)
Fig.3 Turn-off switching times
102
VCE=150V
Ic/IB=10
Ta=25° C
101
Ts
100
Tf
-1
10
100
101
102
Ic,Collector current(mA)
Fig.4 Capacitance
3
10
102
Cib
101
Cob
0
10
10-1
100
101
102
103
Collector voltage(V)
Fig.5 ON Voltage
1.0
Ta=25°
0.8
C
VBE(sat),Ic/IB=10
0.6
VBE(ON),VCE=10V
0.4
0.2
VCE(sat),Ic/IB=10
0
10-1
100
101
102
103
Ic,Collector current(mA)
Fig.6 Collector saturation region
0.5
0.4
Ic=1mA
Ic=10mA
0.3
Ic=50mA
0.2
0.1
Ta=25°
0
C
101
102
103
104
105
Ib, base current(µA)
Fig.7 High Frequency
current gain
2
10
VCE=10V
f=10MHz
Ta=25° C
101
100
-1
10
10-1
100
101
102
103
Ic,Collector current(mA)
Fig.8 Safe operating area
4
10
Valid Duty
Cycle<10%
3
1ms
10
1s
0.1ms
2
10
Ta=25°
C
1
10
PZTA44
0
10
100
101
102
103
104
Collector voltage(V)
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
3
QW-R207-003,A