PZTA44 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN high-voltage transistor

UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
FEATURES
*Collector-Emitter voltage:
VCEO=400V(PZTA44)
VCEO=350V(PZTA45)
*Collector current up to 300mA
*Complement to PZTA94/93
*Collector Dissipation:
Pc(max)=2W
APPLICATION
*Telephone switching
*High voltage switch
3
2
1
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
V
PZTA44
PZTA45
VCBO
500
400
Collector-emitter voltage
V
PZTA44
PZTA45
VCEO
400
350
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector dissipation(Tc=25°C)
VEBO
Pc
Pc
6
V
625
mW
2
W
Collector current
Ic
300
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R207-003,A