PZTA44 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN high-voltage transistor

UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=100µA,IB=0
PZTA44
500
PZTA45
400
Collector-emitter breakdown voltage BVCEO
Ic=1mA,IB=0
PZTA44
400
PZTA45
350
Emitter-base breakdown voltage
BVEBO
IE=100µA,Ic=0
6
Collector cut-off current
ICBO
PZTA44
VCB=400V,IE=0
PZTA45
VCB=320V,IE=0
Collector cut-off current
ICES
PZTA44
VCE=400V,IB=0
PZTA45
VCE=320V,IB=0
Emitter cut-off current
IEBO
VEB=4V,Ic=0
DC current gain(note)
hFE
VCE=10V,Ic=1mA
40
VCE=10V,Ic=10mA
50
VCE=10V,Ic=50mA
45
VCE=10V,Ic=100mA
40
Collector-emitter saturation voltage VCE(sat)
Ic=1mA,IB=0.1mA
Ic=10mA,IB=1mA
Ic=50mA,IB=5mA
Base-emitter saturation voltage
VBE(sat)
Ic=10mA,IB=1mA
Current gain bandwidth product
fT
VCE=20V,Ic=10mA,
50
f=100MHz
Output capacitance
Cob
VCB=20V,IE=0
f=1MHz
Note:Pulse test:PW<300µs,Duty Cycle<2%
TYP MAX UNIT
V
V
V
µA
0.1
0.1
µA
0.5
0.5
0.1 µA
240
0.4
V
0.5
0.75
0.75 V
MHz
7
pF
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
2
QW-R207-003,A