2SC5889 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – 2SC5889

UTC2SC5889 NPN EPITAXIAL SILICON TRANSISTOR
VCE(sat) - Ic
1.0
7
Ic/IB=20
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.01 ^{2 3 5 70.1 2 3 5 71.0 2 3 5 710}
Collector Current, Ic (A)
VCE(sat) - Ic
10
7
Ic/IB=50
5
3
2
25℃
1.0
Ta=-25℃
7
5
75℃
3
2
0.1
0.01 ^{2 3 5 70.1 2 3 5 71.0 2 3 5 710}
Collector Current, Ic (A)
1000
7
5
3
2
fT - Ic
VCE=2V
100
7
5
3
2
10
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 71.0 2 3 5}
Collector Current, Ic (A)
VCE(sat) - Ic
1.0
7
5
Ic/IB=50
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 71.0 2 3 5 710}
Collector Current, Ic (A)
Cob - VCB
100
f=1MHz
7
5
3
2
10
1.0 2 3 5 7 10 2 3 5
Collector - to - Emitter Voltage, VCB (V)
ASO
2
10 ^Icp=9A
7
5
Ic=5A
3
2
1.0
7
5
3
2
0.1
7
5
<100 μs
1m
Dissipation
100m
Limit
10m
s
s
s
500
μs
DC
operation
S _{/ B Limit}
3
2 Ta=25⊥
0.01 ^{Single pulse}
0.01 ^{2 3 5 7} 0.1 ^{2 3 5 71.0 2 3 5 710 2}
Collector-Emitter Voltage, VCE (V)
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R216-005,A