2SC5889 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – 2SC5889

UTC2SC5889 NPN EPITAXIAL SILICON TRANSISTOR
DC/DC CONVERTER
APPLICATIONS
FEATURES
*Large current capacitance.
*Low collector-emitter saturation voltage.
*High-speed switching
*High allowable power dissipation.
1
APPLICATIONS
* relay drivers, lamp drivers, motor drivers, strobes.
T O -9 2 S P
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Collector Current (Pulse)
Icp
Base Current
IB
Collector Dissipation
Pc
Junction Temerature
Tj
Storage Temprature
Tstg
1.EMITTER 2.COLLECTOR 3.BASE
RATINGS
15
10
7
5
9
1
0.55
150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Base Breakdown Voltage
V(BR)CBO Ic=10μA,IE=0
Collector Emitter Breakdown Voltage
V(BR)CES Ic-1mA,RBE=∞
Emitter Base Breakdown Voltage
V(BR)EBO IE=10μA,Ic=0
Collector Cutoff Current
ICBO
VCB=10V,IE=0
Emitter Cutoff Current
IEBO
VEB=4V,Ic=0
DC Current Gain
HFE1
HFE2
VCE=2V,Ic=500mA
VCE=2V,Ic=3A
Collector-Emitter Saturation Voltage
VCE (sat)1 Ic=1.5A,IB=30mA
VCE (sat)2 Ic=3A,IB=60mA
Base-Emitter Saturation Voltage
VBE (sat) Ic=1.5A,IB=30mA
Gain Bandwidth Product
fT
VCE=2V,Ic=500mA
Output Capacitance
Cob VCB=10V,f=1MHz
Turn-ON Time
ton
See specified Test Circuit
Storage Time
tstg
See specified Test Circuit
Fall Time
tf
See specified Test Circuit
MIN TYP MAX UNIT
15
V
10
V
7
V
0.1 μA
0.1 μA
450
1200
200
120 180 mV
230 350 mV
0.85 1.2 V
350
MHz
23
pF
30
210
ns
11
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R216-005,A