2SC5889 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – 2SC5889

UTC2SC5889 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
PW=20μs
D.C.≦1%
INPUT
50Ω
IB1
IB2
RB
VR
+
220μF
OUTPUT
RL
+
470μF
VBE= - 5V
20IB1= -20IB2=Ic=1.5A
Vcc=5V
ELECTRICAL CHARACTERISTICS CURVES
IC - VCE
5
20mA
4
25mA
15mA
10mA
40mA
3
5mA
4mA
2
3mA
2mA
1
1mA
IB=0
0
0
0.2 0.4 0.6 0.8 1.0
Collector - to - Emitter Voltage,VCE (V)
IC - VCE
5
201m5mAA
10mA
8mA
4
6mA
5mA
3
4mA
2
2mA
1
1mA
IB=0
0
0
1
2
3
4
5
Collector - to - Emitter Voltage, VCE (V)
5
VCE=2V
4
IC - VBE
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Collector - to - Emitter Voltage, VCE (V)
10000
7
5
3
2
1000
7
5
3
2
hFE - Ic
VCE=2V
Ta=75℃
-25℃
25℃
100
7
5
3
2
10
0.01 ^{2 3 5 70.1 2 3 5 71.0 2 3 5 710}
Collector Current, Ic (A)
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R216-005,A