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| 1N60_10 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET | |||
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1N60
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TC=25â, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
1N60-A
Drain-Source Breakdown Voltage
1N60-B
BVDSS VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ ID=250μA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=0.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=300V, ID=1.2A, RG=50â¦
Turn-Off Delay Time
tD(OFF) (Note 4,5)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=480V, VGS=10V, ID=1.2A
(Note 4,5)
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS =1.2A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
VGS=0V, IS=1.2A
Reverse Recovery Charge
QRR
dIF/dt=100A/μs (Note1)
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 60mH, IAS = 1A, VDD = 50V, RG = 25â¦, Starting TJ = 25°C
3. ISD ⤠1.2A, di/dt ⤠200A/μs, VDD ⤠BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse Width â¤300μs, Duty Cycleâ¤2%
5. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
600
V
650
V
10 μA
100 nA
-100 nA
0.4
V/â
2.0
4.0 V
9.3 11.5 â¦
120 150 pF
20 25 pF
3.0 4.0 pF
5 20 ns
25 60 ns
7 25 ns
25 60 ns
5.0 6.0 nC
1.0
nC
2.6
nC
1.4 V
1.2 A
4.8 A
160
ns
0.3
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-052,I
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