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1N60_10 Datasheet, PDF (1/6 Pages) Unisonic Technologies – 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
1N60
Power MOSFET
1.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
 DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
 FEATURES
* RDS(ON) =11.5â¦@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
2.Drain
1
1
SOT-223
TO-92
1
1
TO-220
TO-220F
1
TO-251
1
TO-252
1
TO-126
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60L-x-AA3-R
1N60G-x-AA3-R
SOT-223
1N60L-x-T92-B
1N60G-x-T92-B
TO-92
1N60L-x-T92-K
1N60G-x-T92-K
TO-92
1N60L-x-TA3-T
1N60G-x-TA3-T
TO-220
1N60L-x-TF3-T
1N60G-x-TF3-T
TO-220F
1N60L-x-TM3-T
1N60G-x-TM3-T
TO-251
1N60L-x-TN3-R
1N60G-x-TN3-R
TO-252
1N60L-x-TN3-T
1N60G-x-TN3-T
TO-252
1N60L-x-T60-K
1N60G-x-T60-K
TO-126
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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Bulk
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Bulk
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-052,I
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