1N60_10 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET

1N60
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
1N60-A
600
V
1N60-B
V_DSS
650
V
Gate-Source Voltage
Avalanche Current (Note 1)
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
Peak Diode Recovery dv/dt (Note 3)
V_GSS
I_AR
I_D
I_DM
E_AS
E_AR
dv/dt
±30
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
SOT-223
1
W
TO-251
28
W
TO-252
28
W
Power Dissipation
TO-220
P_D
40
W
TO-220F
TO-92(T_a=25℃)
21
W
1
W
TO-126
12.5
W
Junction Temperature
Operating Temperature
T_J
+150
℃
T_OPR
-55 ~ +150
℃
Storage Temperature
T_STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-92
TO-126
SOT-223
TO-251
TO-252
TO-220
TO-220F
TO-126
SYMBOL
θ_JA
θ_Jc
RATINGS
150
110
110
62.5
62.5
140
132
14
4.53
4.53
3.13
5.95
10
UNIT
℃/W
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-052,I