UM5062_16 Datasheet, PDF (3/6 Pages) Union Semiconductor, Inc. – Dual Line ESD Protection Diode Array

UM5062
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
Parameter
Symbol
Conditions
Reverse Stand-Off Voltage
Reverse Breakdown
Voltage
V_RWM
V_BR
I_T=1mA
Reverse Leakage Current
I_R
V_RWM=5V, T=25°C
Clamping Voltage
I_PP=5A, t_P=8/20μs
V_C
I_PP=11A, t_P=8/20μs
Forward Voltage
V_F
I_F=10mA
Junction Capacitance
C_J
V_R=0V, f=1MHz
Junction Capacitance
C_J
V_R=2.5V, f=1MHz
Min Typ Max Unit
5
V
6
6.8 7.2
V
0.1 μA
9.1
V
13
0.8
V
40 55 pF
30 40 pF
Typical Operating Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
1
0.1
0.02
0.04 0.1
1
10
100
1000
Pulse Duration - tp(uS)
Forward Voltage vs. Forward Current
6
5
4
3
2
1
2
Waveform
parameters:
tr=8uS
td=20uS
4
6
8
10
Forward Current - If(A)
Clamping Voltage vs. Peak Pulse Current
13
12
11
10
9
8
7
6
0
Waveform
parameters:
tr=8uS
td=20uS
2
4
6
8
10
Peak Pulse Current - Ipp(A)
Junction Capacitance vs. Reverse Voltage
50
45
40
35
30
0
1
2
3
4
5
Reverse Voltage (V)
___________________________________________________________________________
http://www.union-ic.com Rev.03 Apr.2016
3/6