UM5062_16 Datasheet, PDF (1/6 Pages) Union Semiconductor, Inc. – Dual Line ESD Protection Diode Array

UM5062
Dual Line ESD Protection Diode Array
UM5062 QFN3 1.4×1.1
General Description
The UM5062 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable
applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional
area junctions for conducting high transient currents, offers desirable electrical characteristics for
board level protection, such as fast response time, lower operating voltage, lower clamping voltage
and no device degradation when compared to MLVs.
The UM5062 ESD protection diode protects sensitive semiconductor components from damage or
upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5062 is
available in a QFN3 1.4mm×1.1mm package with working voltages of 5 volt.
It gives designer the flexibility to protect one or two unidirectional line in applications where arrays
are not practical. Additionally, it may be “sprinkled” around the board in applications where board
space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2,
Level 4 (±15kV air, ±8kV contact discharge).
Applications
Features
 Cell Phone Handsets and Accessories
 Microprocessor Based Equipment
Personal Digital Assistants (PDA’s)
 Notebooks, Desktops and Servers
 Portable Instrumentation
 Cordless Phones
 Digital Cameras
 Peripherals
 MP3 Players
 Transient Protection for Data & Power Lines
to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV
(Contact)
 Small Package for Use in Portable Electronics
 Suitable Replacement for MLV’s in ESD
Protection Applications
 Protect One or Two I/O Lines
 Low Clamping Voltage
 Stand-off Voltages: 5V
 Low Leakage Current
 Solid-State Silicon-Avalanche Technology
Pin Configurations
Top View
(Bottom View)
XX: Week Code
UM5062
QFN3 1.4×1.1
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http://www.union-ic.com Rev.03 Apr.2016
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