CHA7012_15 Datasheet, PDF (9/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

X-band High Power Amplifier
CHA7012
Bonding recommendations
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following
table:
Port
Connection
IN (1)
OUT (12)
DC pads to 1^st decoupling level
for double bonding
DC pads to 1^st decoupling level
for single bonding
1^st decoupling level to 2^nd
decoupling level for double
bonding
1^st decoupling level to 2^nd
decoupling level for single
bonding
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Assembly recommendations in test fixture (using TTL circuits)
Vc*
TI*
IN
100pF
Non capacitive pad
10nF
OUT
1µF
TI*
100µF
Vc*
* Performances obtained with the same accesses connected to the same supply
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.
Ref. : DSCHA70129082- 23 March 09
9/10
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Specifications subject to change without notice