CHA7012_15 Datasheet, PDF (10/10 Pages) United Monolithic Semiconductors – X-band HBT High Power Amplifier

CHA7012
X-band High Power Amplifier
Assembly recommendations in test fixture
(using analog biasing circuits)
Vc
Vctrl
IN
100pF
10nF
OUT
1µF
Vctrl
100µF
Vc
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred.
Ordering Information
Chip form :
CHA7012-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.
assumes no responsibility for the consequences of use of such information nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any
patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied.
United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life
support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA70129082- 23 March 09
10/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: [phone] - Fax : [phone]
Specifications subject to change without notice